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| 2N7002DCSM MECHANICAL DATA Dimensions in mm (inches) DUAL N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR 1.40 0.15 (0.055 0.006) 0.64 0.06 (0.025 0.003) 2.29 0.20 (0.09 0.008) 1.65 0.13 (0.065 0.005) 2.54 0.13 (0.10 0.005) 2 1 A 3 4 5 4.32 0.13 (0.170 0.005) FEATURES * V(BR)DSS = 60V * RDS(ON) = 7.5 * ID = 0.115A 6 0.23 rad. (0.009) A = 1.27 0.13 (0.05 0.005) 6.22 0.13 (0.245 0.005) CERAMIC LCC2 PACKAGE (underside view) PAD 1 - Drain 1 PAD 2 - Gate 1 PAD 3 - Gate 2 PAD 4 - Drain 2 PAD 5 - Source 2 PAD 6 - Source 1 ABSOLUTE MAXIMUM RATINGS (TCASE = 25C unless otherwise stated) PER SIDE VDS VGS ID IDM PD Tj Tstg R JA Drain - Source Voltage Gate - Source Voltage Drain Current Pulsed Drain Current * Power Dissipation Derate Above 25C Operating Junction Temperature Range Storage Temperature Range Thermal Resistance, Junction to Ambient TOTAL DEVICE 60V 40V 0.115A 0.8A 200mW 1.60mW/C 400mW 2.0mW/C -55 to 150C -55 to 150C 625C/W 250C/W * Pulse width limited by maximum junction temperature. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 6171 Issue 1 2N7002DCSM ELECTRICAL CHARACTERISTICS (TCASE = 25C unless otherwise stated) Parameter STATIC CHARACTERISTICS V(BR)DSS Gate - Source Breakdown Voltage VGS(th) IGSS IDSS ID(on)* Gate Threshold Voltage Gate - Body Leakage Current Zero Gate Voltage Drain Current On-State Drain Current VGS = 0V VDS = VGS VDS = 60V ID = 10A ID = 0.25mA VGS = 0V TCASE = 125C VDS2VDS(ON) VGS = 10V VGS = 5V RDS(on)* Drain - Source On Resistance ID = 50mA VGS = 10V ID = 0.5A VGS = 5V VDS(on)* gFS* gOS* Ciss Coss Crss tON tOFF Drain - Source On Voltage Forward Transconductance Common Source Output Conductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Time Turn-Off Time VDD = 30V RL = 150 ID = 0.2A * Pulse Test: PW = 80 s , 1% VGEN = 10V RG = 25 7 20 7 20 ns VDS = 25V VGS = 0V f = 1MHz 16 11 2 50 25 5 pF VGS = 10V ID = 0.5A VDS = 10V VDS = 5V TCASE = 125C ID = 0.2A ID = 50mA 80 TCASE = 125C ID = 50mA TCASE = 125C 500 1000 5 9 2.5 4.4 0.25 1.25 2.2 170 500 7.5 13.5 7.5 13.5 0.375 3.75 6.75 ms s V 60 1 70 2.15 2.5 100 1 500 V nA A mA Test Conditions Min. Typ. Max. Unit VGS = 20VVDS = 0V Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 6171 Issue 1 |
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